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| Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60S - 220 PACKAGE) NON INSULATED TYPE Features SENSITIVE GATE TRIAC (TO * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=4A) * High Commutation dv/dt * Sensitive Gate Triggering 4 Mode General Description The devices is sensitive gate triac suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. Absolute Maximum Ratings=25ae(c) Ta T stg Tj Storage Temperature ------------------------ 40~125ae Junction Temperature -------------------- 40~125ae Operating Peak PGM Gate Power Dissipation ---------------------1.5W PG V(c) Average Gate Power Dissipation -------------------0.1W A VDRM Repetitive Peak Off-State Voltage -------------------600V IT RMS(c) R.M.S On-State Current Ta=95ae(c) ------------------4.0A VGM IGM Peak Gate Voltage ------------------------ 7.0V Peak Gate Current ------------------------ 1.0A On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) -----30/33A ITSM Surge Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60S Electrical Characteristics=25ae Ta (c) Symbol IDRM Items Repetitive Peak Off-State Current Min. Typ. Max. 1.0 Unit mA Conditions VD =VDRM, Single Phase, Half Wave, T J=125ae IT=6A, Inst. Measurement VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm T J=125ae D =1/2VDRM ,V T J=125ae D =2/3VDRM ,V (di/dt)c= -0.5A/ms VTM I+GT1 I-GT1 I-GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.2 5 1.6 5.0 5.0 5.0 10.0 1.4 1.4 1.4 1.8 V mA mA mA mA V V V V V V/S IH Rth(j-c) 10 3 mA ae /W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60S Fig 2. On-State Voltage Performance Curves Fig 1. Gate Characteristics On-state Voltage (V) Gate Current mA(c) On-state Current [A] On-state Voltage V(c) Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On State Current vs. Maximum Power Dissipation Junction Temperature [ae ] Power Dissipation [W] RMS On-state current [A] Fig 5. On State Current vs. Allowable Case Temperature Allowable Case Temp. [a C] Surge On-state Current [A] Fig 6. Surge On-State Current Rating ( Non-Repetitive ) RMS On-state Current [A] Time Cycles(c) Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60S Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature Transient Thermal Junction Temperature [ae ] Fig 9. Gate Trigger Characteristics Test Circuit Junction Temperature [ae ] Impedance [ae ] /W Time (c) sec Fig 9. Gate Trigger Characteristics Test Circuit 10 | 10 | 10 | 10 | Test Proceduren Test Procedureo Test Procedure o Test Procedure o |
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